Zeolite L crystals loaded with a fluorescing donor dye and modified at the external surface with an acceptor dye are studied on a semiconductor surface.
Radiationless excitation energy transfer from the donor dye to the acceptor dye and further through a thin insulating layer to the semiconductor is observed. The picture explains the organization of the dye-zeolite L semiconductor system. We show the structure of a single channel of an ATTO680,DXP-zeolite L on a silicon surface with an insulating SiO2 layer. The arrows indicate light absorption (ΔE) and radiationless excitation energy transfer (EnT).
This work was carried out in the group of Prof. Gion Calzaferri.
S. Huber, G. Calzaferri;
"Energy Transfer from Dye–Zeolite L Antenna Crystals to Bulk Silicon
ChemPhysChem, 5, 239-242, (2004);